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6642CU MPC8306S SED1575 74HC1 3000A 26481C ELT25ZC 00700
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  2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SC3405 features excellent switching times t r =1.0s (max.) tf=1.0s (max.) at i c =0.3a high colletor breakdown voltage: v ceo =800v absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 900 v collector to emitter voltage v ceo 800 v emitter to base voltage v ebo 8v collector current (dc) i c 0.8 a collector current (pulse) i cp 1.5 a base current i b 0.2 a total power dissipation ta = 25 1w t c =25 20 w junction temperature t j 150 storage temperature t stg -55to+150 p c electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =800v,i e =0 100 a emitter cutoff current i ebo v eb =8v,i c =0 1 ma emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 900 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 800 v v ce =5v,i c =1ma 6 v ce =5v,i c =0.3a 10 collector-emitter saturation voltage v ce(sat) i c =0.3a,i b =0.06a 0.5 v base- emitter saturation voltage v be(sat) i c =0.3a,i b =0.06a 1.2 v switching time turn-0n time tr 1 s switching storage time tstg 4.0 s switching fall time tf 1 s h fe dc current gain smd type transistors smd type smd type smd type smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123


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